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報名四技二專各入學管道時請注意電子工程『系』為四技學制、電子工程『科』二專學制                 

單位資訊
廖淑慧(Shu-Hui Liao)老師

 

廖淑慧(Shu-Hui Liao)

 一、基本資料

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  •  職    稱:助理教授
  •  最高學歷:國立中興大學物理研究所博士
  •  聯絡電話:05-6315674
  •  傳真電話:05-6315643
  •  電子郵件:shliao@nfu.edu.tw

 

 二、教學與服務經歷

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  •  現    職:國立虎尾科技大學 電子工程系 助理教授 (2021/08~迄今)

  •  經    歷:中州科技大學 電子工程系 副教授 (2008/08~2017/07)

中州科技大學 電子工程系 講師 (1990/02~2008/07)

 

 三、專長

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  •  半導體元件物理
  •  光電元件
     

 四、相關計畫

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  •  科 技 部:
  1. 薄膜絕緣層覆矽之矽/矽鍺異質結雙極性電晶體元件特性及最佳化技術研究.(NSC-98-2112-M-235-001)
  •  教 育 部:
  1. 104學年度「永續發展、防減災與氣候變遷調適」通識課程-氣候變遷調適與防減災(104學年度第2學期) 
  2. 104學年度「永續發展、防減災與氣候變遷調適」通識課程-氣候變遷調適與水資源(104學年度第1學期) 
  3. 104年度補助環境教育推廣活動計畫-氣候變遷與綠能科技研習營 
  4. 103學年度第二學期教育部補助大專校院辦理永續發展及氣候變遷調適通識課程與學分學程計畫-氣候變遷調適與能源永續 
  5. 103學年度第一學期教育部補助大專校院辦理永續發展及氣候變遷調適通識課程與學分學程計畫-氣候變遷調適與能源科技 
  6. 102學年度第二學期教育部補助大專校院辦理永續發展及氣候變遷調適通識課程與學分學程計畫-氣候變遷調適與低碳生活 
  7. 102學年度第一學期教育部補助大專校院辦理永續發展及氣候變遷調適通識課程與學分學程計畫-節能減碳與永續發展 
  8. 102學年度第一學期現代公民核心能力課程計畫-科技與智慧生活 
  9. 101年度第二學期教育部補助大專校院辦理永續發展及氣候變遷調適通識課程與學分學程計畫-氣候變遷與節能綠生活 
  10. 101學年度第二學期智慧生活跨領域基礎課程與服務學習課程推廣計畫-智慧科技與優質生活 
     

 五、論文發表

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  •  國內外期刊論文:
  1. Shu-Hui Liao, Modeling of an AlGaAs-based VCSEL with Bragg Mirrors, Lecture Notes in Electrical Engineering,vol.345, January 2016, Pages 271-276.(EI)

  2. Shu-Hui Liao, Thermal Resistance Characterization of SiGe Based HBTs on Thick-Film and Thin-Film SOI, Lecture Notes in Electrical Engineering,vol.345, January 2016, Pages 335-340. (EI)

  3. Shu-Hui Liao, Modeling and Characterization of the Thermal Behavior of SiGe-HBTs, Lecture Notes in Electrical Engineering, vol.293, April 2014,Pages 1249-1254.(EI)

  4. Shu-Hui Liao and Shu-Tong Chang, Electrical Characteristics of Si/SiGe HBTs on Thin- Film SOI Substrates, Journal of the Korean Physical Society (JKPS), Vol.57, No. 6, December 2010, pp. 1563-1568. (SCI) 

  5. Shu-Tong Chang and Shu-Hui Liao, Light emission and Photoluminescence from high-k dielectrics containing Ge nanocrystals, Journal of Vacuum Science and Technology B (JVST B), Vol.27, February 2009, pp.535-537. (SCI) 

  6. Shu-Hui Liao, Shu-Tong Chang, Hsiao-Chun Huang, Chee-Wee Liu, and Chung-Yi Lin, Studying the Strain Effect on Silicon Atomic Wires, Journal of the Korean Physical Society (JKPS) Vol. 53, No. 96, December 2008, pp.3655-3661. (SCI)

  7. M. H. Lee, S. T. Chang, C.-Y. Peng, B.-F. Hsieh, S. Maikap, S.-H. Liao, Studying the impact of carbon on device performance for strained-Si MOSFETs, Thin Solid Films, Volume 517, Issue 1, 3 November 2008, Pages 105-109. (SCI, EI)

  8. S. T. Chang, S. H. Liao, C.-Y. Lin, The impact of uniaxial stress on subband structure and mobility of strain Si NMOSFETs, Thin Solid Films, Volume 517, Issue 1, 3 November 2008, Pages 356-358. (SCI, EI) 

  9. Shu-Tong Chang, S. H. Liao, Wei-Ching Wang, Chung-Yi Lin, and Jun-Wei Fan, Impact of Stress Engineering on Electron Mobility and Ballistic Current for Strianed Si NMOSFETs, Journal of the Korean Physical Society(JKPS), Vol. 53, No. 2, August 2008, pp. 1024-1029.(SCI)

  10. Shu-Tong Chang, Wei-Ching Wang, Jacky Huang, Shu-Hui Liao, Chung-Yi Lin, Exploring the effect of width on performance enhancement in NMOSFETs with a silicon–carbon alloy stressor and a tensile stress silicon nitride liner, Applied Surface Science, Volume 254, Issue 19, 30 July 2008, Pages 6177-6181. (SCI, EI

  11. S. T. Chang, C. Y. Lin, S.-H. Liao, Theoretical study of electron mobility for silicon–carbon alloys, Applied Surface Science, Volume 254, Issue 19, 30 July 2008, Pages 6203-6207. (SCI, EI)

  12. 廖淑慧, 王維敬, 張書通, 林中一, 絕緣層上覆矽之矽鍺異質結構雙極性電晶體的氧化層厚度對元件性能影響之模擬研究, Journal of Engineering, National Chung Hsing University, Vol. 19, No. 1, pp. 1-8(2008)

  13. Shu-Hui Liao, Analysis of Si/Ge/Si MOSFET by One Dimensional Schroedinger Equation, Journal of Chung Chou, 23(2006

  14. 廖淑慧,黃坤賢,黃照智,以平面波展開法分析光子晶體能帶結構,中州學報, 22,209 (2005)

  15. 廖淑慧,謝文鑫,利用光纖感測器檢測電壓之研究,中州學報,12,73~78(1999)

  16. 廖淑慧,利用一維波帶片之色散性進行可變波段濾色之研究,中州學報,8, 190~200 (1995)

  •  國內外研討會論文
  1. Shu-Hui Liao, Modeling of an AlGaAs-based VCSEL with Bragg Mirrors, The 3rd International Conference on Intelligent Technologies and Engineering Systems (ICITES 2014),December 19 -21, 2014, Kaohsiung, Taiwan.

  2. Shu-Hui Liao, Thermal Resistance Characterization of SiGe Based HBTs on Thick-Film and Thin-Film SOI, The 3rd International Conference on Intelligent Technologies and Engineering Systems (ICITES 2014), December 19 -21, 2014, Kaohsiung, Taiwan.

  3. Shu-Hui Liao, Modeling and Characterization of the Thermal Behavior of SiGe-HBTs, Second International Conference on Intelligent Technologies and Engineering Systems (ICITES2013),December 12 – 14, 2013, Kaohsiung, Taiwan.

  4. Shu-Hui Liao, Yi-Hao Chan, Kai-Han Yao and Shou-Dong Syu, Modeling and Simulation of DBR mirrors for Vertical Cavity Surface Emitting Lasers, 2012 International Symposium on Nano Science and Technology(2012 ISNST), November 8-9, 2012, Tainan, Taiwan.

  5. Shu-Hui Liao, An Investigation of Self-heating effect for npn SiGe HBTs Fabricated on thick-film SOI Substrates, The 1st IEEE Global Conference on Consumer Electronics (GCCE 2012), October 2-5, 2012, Makuhari Messe, Tokyo, Japan.

  6. Shu-Hui Liao, Chuan-Yuen Wang ,Food Waste Management System for Bioenergy, International Workshop on Kitchen Waste-Based Bioenergy, August 28th-29th, 2012, Howard Prince Hotel, Taichung, Taiwan.

  7. Shu-Hui Liao, Zong-Wei Sei, Yun-Siang Chen, Simulation of Distributed Bragg Reflectors for Vertical Cavity Surface Emitting Lasers, International Photonics Conference 2011(IPC 2011), Dec. 8-10, 2011, Tainan, Taiwan.

  8.  Shu-Hui Liao, Yun-Siang Chen and Yuan-Chang Li, Effect Of Ge Content On DC Characteristics Of SiGe HBTs On SOI Substrates, 2011 International Symposium on Nano Science and Technology(2011 ISNST), November 18-19, 2011, Tainan, Taiwan.

  9.     Shu-Hui Liao, Ming-Chun Chien and Yuan-Chang Li, Self-Heating Effect Of NPN SiGe HBTs On Thick-Film SOI, 2011 International Symposium on Nano Science and Technology(2011 ISNST), November 18-19, 2011, Tainan, Taiwan.

  10. Shu-Hui Liao, J.C. Cherng, Gow-Huei Yang, W.T. Chang, Ke-Ren Chen, De- Wei Ye, and Yin- Chung Lin, Modeling of Vertical Cavity Surface Emitting Laser with Bragg Mirrors for Operation at 980 nm, 2010 International Conference on Optics and Photonics Taiwan (2010 OPT), December 3-4 , 2010,Tainan, Taiwan.

  11. Shu-Hui Liao, De-Wei Ye, and Shu-Tong Chang, Electro-thermal Behavior and Optimization of Si/SiGe HBTs on Thin-Film SOI, 2010 International Electron Devices and Materials Symposia (2010 IEDMS), November 18-19, 2010, Tao-Yuan County, Taiwan.

  12. Shu-Hui Liao, Shu-Tong Chang, and Wei-Ching Wang, Technology CAD Simulation Study for Self-Heating Effects in Si/SiGe HBTs on Thin-Film SOI Substrates, 3rd IEEE International Nano Electronics Conference (INEC2010), January 3 to 8, 2010, City University of Hong Kong, China. (EI)

  13. Shih-Fong Lee, Shu-Hui Liao, Yung-Ping Chang, Li-Ying Lee, Shi-Kai Li, The Synthesis of Carbon Nanotubes on Silicon Nanowires by Thermal Chemical Vapor Deposition, 3rd IEEE International Nano Electronics Conference (INEC2010), January 3 to 8, 2010, City University of Hong Kong, China. (EI)

  14. Shu-Hui Liao, Shu-Tong Chang, and Wei-Ching Wang, Electrical Characteristics of Si/SiGe HBTs on Thin-Film SOI Substrates, The 6th International Conference on Advanced Materials and Devices (ICAMD 2009), December 9 to 11, 2009, Jeju, Korea.

  15. Shu-Hui Liao, Characterization of Vertical Cavity Surface Emitting Lasers with AlAs/AlGaAs Bragg Mirrors, The 6th International Conference on Advanced Materials and Devices (ICAMD 2009), December 9 to 11, 2009, Jeju, Korea.

  16. Shu-Hui Liao, Shu-Tong Chang, and Wei-Ching Wang, Thermal Resistance Characterization of SiGe HBTs on Thick-Film and Thin-Film SOI, TACT 2009 International Thin Films Conference, December 14 - 16, 2009, NTUT, Taipei, Taiwan.

  17. Shu-Hui Liao, J. C. Cherng, and Yin- Chung Lin, Electron Tunneling Properties of Resonant Tunneling Devices with Symmetric Double-Barriers,2009 International Symposium on Nano Science and Technology (2009 ISNST), November 20-21, 2009, Tainan Taiwan.

  18. Shu-Hui Liao, Huei-Jyu Cai, R. H. Shao, Ke-Ren Chen, Vertical Cavity Surface Emitting Laser with AlAs/AlGaAs Bragg Mirrors, 2009 International Electron Devices and Materials Symposia (2009 IEDMS), November 19-20, 2009, Taipei Taiwan.

  19. Shu-Hui Liao, Electron Transport of the Heterostructure Bipolar Transistor with Double Resonant Tunnel Barrier, 2008 International Electron Devices and Materials Symposia (2008 IEDMS) November 28-29, 2008, Taichung, Taiwan.

  20. Shu-Hui Liao, I-Chun Chen, Investigation of High-Reflectivity Bragg Mirrors for Electromagnetic Radiation, 2008 International Electron Devices and Materials Symposia (2008 IEDMS) November 28-29, 2008, Taichung, Taiwan.

  21. Shu-Tong Chang and Shu-Hui Liao, Photoluminescence and Light emission from high-k dielectrics containing Ge nanocrystals, 15th Workshop on Dielectrics in Microelectronics (WoDiM 2008), June 23-25, 2008, Bad Saarow (Berlin), Germany.

  22. Shu-Hui Liao, Shin-Jiun Kuang, Shu-Tong Chang, Chung-Yi Lin, Chang-Wei Liu, IMPACT OF STRAIN ON THE ELECTRON TRANSPORT PROPERTY OF SILICON ATOMIC WIRESYSTEM, The 6-th Cross-strait workshop on nano science and technology, January, 21-23, 2008, Taiwan.

  23. S. H. Liao, W.-C. Wang, S. T. Chang, and C.-Y. Lin, A Simulation Study of Oxide Thickness Effect on the Performance of SiGe HBTs with SOI Structure, 2007 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC-2007), December 20-22, 2007, Tainan, Taiwan. (EI)

  24. W. -C. Wang, S. T. Chang, Jacky Huang, S. H. Liao, and C. Y. Lin, 3D Simulations of Width Effect on Performance in NMOSFETs with SiC S/D Stressors and CESL Linear, 2007 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC-2007), December 20-22, 2007, Tainan, Taiwan. (EI)

  25. Wei-Ching Wang, Shu-Tong Chang, Jacky Huang, Shu-Hui Liao, and Chung-Yi Lin, Exploring Width Effect on Performance Enhancement in NMOSFETs with Silicon-Carbon Alloy Stressor and Tensile Stress Silicon Nitride Linear, Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI-5), November 12-14, 2007, Hachioji, Tokyo, Japan.

  26. S. T. Chang, C. Y. Lin, S. H. Liao, Theoretical Study of Electron Mobility for Silicon-Caron Alloys, Fifth International Symposium on Control of Semiconductor Interfaces(ISCSI-5), November 12-14, 2007, Hachioji, Tokyo, Japan.

  27. Min-Hung Lee, Shu-Tong Chang, Shu-Hui Liao, and Ming-Han Liao, Mechanical Bending Cycles of a-Si:H Layer on Plastic Substrate by PECVD for Flexible Display, The 10th Asia Pacific Physics Conference (APPC10),August 21-24, 2007, Pohang, Korea.

  28. Shu-Tong Chang, Shu-Hui Liao, Chung-Yi Lin, Jun-Wei Fan, and Wei-Ching Wang, Impact of Stress Engineering on Electron Mobility and Ballistic Current for Strianed Si NMOSFETs, The 10th Asia Pacific Physics Conference (APPC10), August 21-24, 2007, Pohang, Korea.

  29. Shu-Tong Chang, Shu-Hui Liao, Ming Tang, Yih-Chun Wu, Wei-Ching Wang, and Chung-Yi Lin, Studying of Mechanical Strain Effect of p-channel Poly Silicon Thin Film Transistors, The 10th Asia Pacific Physics Conference (APPC10), August 21-24, 2007, Pohang, Korea.

  30. Shu-Tong Chang, Zhe-Zhen Su, Chung-Yi Lin, Jun-Wei Fan, and Shu-Hui Liao, Analysis of Carrier in Arbitrarily Strained Germanium, The10th Asia Pacific Physics Conference (APPC10), August 21-24, 2007, Pohang, Korea.

  31. Shu-Hui Liao, Shu-Tong Chang, Chung-Yi Lin, Wei-ChingWang, and Jun-Wei Fan, Studying of Strain Effect on Silicon Atomic Wires, The 10th Asia Pacific Physics Conference (APPC10), August 21-24, 2007, Pohang, Korea.

  32. S. T. Chang, M. H. Lee, C. -Y. Peng, and S. H. Liao, Studying the Impact of Carbon on Device Performance for Strained-Si MOSFETs, 5th International Conference on Silicon Epitaxy and Heterostructures(ICSI-5 2007), May 20 - 25, 2007, Marseille, France.

  33. S. T. Chang, S. H. Liao, and C. Y. Lin, The Impact of Uniaxial Stress on Subband Structure and Mobility of Strain Si, 5th International Conference on Silicon Epitaxy and Heterostructures(ICSI-5 2007), May 20 - 25, 2007, Marseille, France.

  34. Shu-Hui Liao, Investigation of the Charges Accumulation of a Two-Terminal Bulk SiGe MOSFET by Schroedinger Equation., Proceedings of the 2006 International Electron Devices and Materials Symposium (IEDMS S2006), December 7-8, 2006, National Cheng Kung University, Tainan, Taiwan.

 

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